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| MPS6518 Discrete POWER & Signal Technologies MPS6518 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* Symbol VCEO VEBO IC TJ, Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 4.0 200 -55 to +150 Units V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6518 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation MPS6518 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 0.5 mA, IB = 0 I E = 10 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 60C 40 4.0 0.5 1.0 V V A A ON CHARACTERISTICS* hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage VCE = 10 V, IC = 2.0 mA VCE = 10 V, IC = 100 mA I C = 50 mA, I B = 5.0 mA 150 90 300 0.5 V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 100 kHz 4.0 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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